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Volumn 97, Issue 24, 2010, Pages

Distinguishing impurity concentrations in GaAs and AlGaAs using very shallow undoped heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND IMPURITIES; GAAS; HETEROSTRUCTURES; HIGH MOBILITY; IMPURITY CONCENTRATION; INTERFACE ROUGHNESS; INTRINSIC LIMIT; LOW RESISTIVITY; MODULATION DOPING; QUANTITATIVE INFORMATION; SPACER LAYER; SURFACE STATE; TWO-DIMENSIONAL ELECTRON GASES (2DEG);

EID: 78650365365     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3522651     Document Type: Article
Times cited : (26)

References (18)
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  • 12
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    • (1974) Jpn. J. Appl. Phys. , vol.13 , pp. 367
    • Matsumoto, Y.1    Uemura, Y.2
  • 13
    • 0001192086 scopus 로고
    • PLRBAQ 0556-2805,. 10.1103/PhysRevB.38.10798
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    • Hirakawa, K.1    Sakaki, H.2
  • 15
    • 78650401318 scopus 로고    scopus 로고
    • 2 for the "A" data are 0.002(A2513), 0.001(A2512), and 0.002(A2511), respectively.
    • 2 for the "A" data are 0.002(A2513), 0.001(A2512), and 0.002(A2511), respectively.
  • 17
    • 0000895451 scopus 로고    scopus 로고
    • Two-dimensional electron gas formed in a back-gated undoped heterostructure
    • DOI 10.1063/1.121171, PII S0003695198022141
    • Y. Hirayama, K. Muraki, and T. Saku, Appl. Phys. Lett. APPLAB 0003-6951 72, 1745 (1998). 10.1063/1.121171 (Pubitemid 128671448)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.