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Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

Fabrication and characterization of an induced GaAs single hole transistor

(6) Klochan, O a Chen, J C H a Micolich, A P a Hamilton, A R a Muraki, K b Hirayama, Y c

a UNIVERSITY OF NEW SOUTH WALES (Australia)

b NTT Basic Research Laboratories (Japan)

c TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NOISE; CONDUCTANCE OSCILLATIONS; GAAS; HETEROSTRUCTURES; LOW FREQUENCY; LOW TEMPERATURES; MODULATION DOPING; MODULATION-DOPED; ORDER OF MAGNITUDE; P-TYPE; QUANTUM DOT; SINGLE HOLE TRANSISTORS; TRANSPORT MEASUREMENTS;

DOPING (ADDITIVES); ELECTRIC FIELDS; GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 77949411213 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3336011 Document Type: Article

Times cited : (28)

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