Resistive-switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 2, 2012, Pages 364-368

  Wang, Yongshun ^a  

^a ZHENJIANG WATERCRAFT COLLEGE   (China)

Author keywords

resistive switching; transparent conductive films; ZnO

Indexed keywords

COMPLIANCE CURRENT; CONDUCTIVE FILAMENTS; INDIUM-FREE; INSULATOR LAYER; LOW-TO-HIGH; NONVOLATILE MEMORY DEVICES; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; TRANSPARENT CONDUCTIVE FILMS; ZNO;

CONDUCTIVE FILMS; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NONVOLATILE STORAGE; ORGANIC CHEMICALS; RANDOM ACCESS STORAGE; SWITCHING; SWITCHING SYSTEMS; ZINC;

ZINC OXIDE;

EID: 84863011219     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127391     Document Type: Article

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