Realizing the full potential of silicon carbide power devices

2010 IEEE 12th Workshop on Control and Modeling for Power Electronics, COMPEL 2010

Volumn , Issue , 2010, Pages

  Stevanovic, Ljubisa ^a   Matocha, Kevin ^a   Stum, Zachary ^a   Losee, Peter ^a   Gowda, Arun ^a   Glaser, John ^a   Beaupre, Richard ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUCK BOOST CONVERTER; COMPETING DESIGNS; DISCRETE DEVICES; ELECTRONICS APPLICATIONS; HIGH EFFICIENCY; HIGHER EFFICIENCY; HIGHER TEMPERATURES; MOSFETS; ON-RESISTANCE; POWER CONVERSION; POWER DENSITIES; POWER DEVICES; POWER MODULE; POWER MOSFETS; SIC DEVICES; SILICON CARBIDE MOSFETS; SILICON-CARBIDE POWER DEVICES; SWITCHING CONVERTER; SWITCHING ENERGY;

ELECTRIC CONVERTERS; MOSFET DEVICES; POWER ELECTRONICS; SILICON CARBIDE; SWITCHING CIRCUITS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957980136     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMPEL.2010.5562412     Document Type: Conference Paper

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