Growth and characterization of indium-doped zinc oxide thin films prepared by sol-gel method

Acta Physica Polonica A

Volumn 121, Issue 1, 2012, Pages 217-220

  Kim, M S ^a   Yim, K G ^a   Kim, S ^a   Nam, G ^a   Lee, D Y ^b   Kim, Jin Soo ^c   Kim, Jong Su ^d   Leem, J Y ^a  

^a Inje University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Chonbuk National University   (South Korea)

^d Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INDIUM; METALLIC FILMS; OPTICAL BAND GAPS; OPTICAL FILMS; OPTICAL PROPERTIES; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOL-GELS; ULTRAVIOLET VISIBLE SPECTROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTALLINITIES; DIRECT BAND GAP; DOPED ZINC OXIDE THIN FILMS; INDIUM-DOPED ZNO THIN FILMS; LOCALIZED STATE; SOL-GEL SPIN COATING METHOD; STRUCTURAL AND OPTICAL PROPERTIES; UV VISIBLE SPECTROSCOPY;

THIN FILMS;

EID: 84862915028     PISSN: 05874246     EISSN: 1898794X     Source Type: Journal    
DOI: 10.12693/APhysPolA.121.217     Document Type: Conference Paper

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