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Volumn 42, Issue 4, 2010, Pages 1163-1166
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Photoconductivity characteristics of ZnO nanoparticles assembled in nanogap electrodes for portable photodetector applications
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Author keywords
II VI semiconductors; Nanoparticles; Photodetector
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Indexed keywords
DIELECTROPHORESIS;
HIGH SENSITIVITY;
II-VI SEMICONDUCTOR;
II-VI SEMICONDUCTORS;
INTERBAND;
IV CHARACTERISTICS;
NANO DEVICE;
NANO-GAP;
NANOGAP ELECTRODES;
NON-LINEAR;
ORDER OF MAGNITUDE;
PHOTOGENERATED CHARGE CARRIERS;
PHOTORESPONSE CHARACTERISTICS;
PHOTORESPONSES;
RESPONSE TIME;
SEMICONDUCTING BEHAVIOR;
SLOW COMPONENT;
TRAPPING CENTERS;
ULTRA-VIOLET;
UV ILLUMINATIONS;
ZNO NANOPARTICLES;
ELECTRODES;
ELECTROPHORESIS;
FABRICATION;
OPTOELECTRONIC DEVICES;
PHOTOCONDUCTIVITY;
PHOTODETECTORS;
VANADIUM;
ZINC OXIDE;
NANOPARTICLES;
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EID: 76949102096
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2009.10.049 Document Type: Article |
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Times cited : (17)
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References (18)
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