Thermoelectric properties of porous silicon

Applied Physics A: Materials Science and Processing

Volumn 107, Issue 4, 2012, Pages 789-794

  De Boor, J ^a   Kim, D S ^a   Ao, X ^a   Becker, M ^a   Hinsche, N F ^b   Mertig, I ^a,b   Zahn, P ^b   Schmidt, V ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MATERIALS; HALL MEASUREMENTS; HIGH TEMPERATURE; LIQUID PHASE; N- AND P-TYPE DOPING; NANO-STRUCTURED; POROUS SI; SINGLE-CRYSTALLINE; THERMOELECTRIC EFFICIENCY; THERMOELECTRIC PROPERTIES;

POROUS SILICON; THERMOELECTRIC EQUIPMENT;

THERMOELECTRICITY;

EID: 84862829682     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-012-6879-5     Document Type: Article

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