Effect of strain on the thermoelectric properties of silicon: An abinitio study

Journal of Physics Condensed Matter

Volumn 23, Issue 29, 2011, Pages

  Hinsche, N F ^a   Mertig, I ^a,b   Zahn, P ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; ANALYTICAL MODEL; BAND STRUCTURE EFFECTS; BIAXIAL TENSILE STRAIN; COMPRESSIVE STRAIN; EFFECT OF STRAIN; ELECTRON-DOPED; FIRST-PRINCIPLES CALCULATION; HIGH TEMPERATURE; HOLE-DOPING; LOW TEMPERATURES; POWER FACTORS; STRAINED SILICON; TEMPERATURE RANGE; THERMOELECTRIC PROPERTIES; THERMOELECTRIC TRANSPORT PROPERTIES;

CALCULATIONS; ELECTRIC POWER FACTOR; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; THERMOELECTRICITY; TRANSPORT PROPERTIES;

TENSILE STRAIN;

EID: 79960621589     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/29/295502     Document Type: Article

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