Effect of oxygen partial pressure on the structure and properties of Cu-Al-O thin films

Applied Surface Science

Volumn 258, Issue 14, 2012, Pages 5354-5359

  Zhang, Yongjian ^a   Liu, Zhengtang ^a   Feng, Liping ^a   Zang, Duyang ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Cu Al O film; Electrical resistivity; Magnetron sputtering; Oxygen partial pressure

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ENERGY GAP; MAGNETRON SPUTTERING; OPACITY; OXYGEN; PARTIAL PRESSURE; THIN FILMS;

CU-AL-O FILMS; EFFECT OF OXYGEN; ELECTRICAL AND OPTICAL PROPERTIES; OXYGEN PARTIAL PRESSURE; PHASE CONSTITUTION; QUARTZ SUBSTRATE; RADIO FREQUENCY MAGNETRON SPUTTERING; STRUCTURE AND PROPERTIES;

COPPER COMPOUNDS;

EID: 84862812349     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.02.003     Document Type: Article

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