The influence of Cu/Al ratio on properties of chemical-vapor-deposition-grown p -type Cu-Al-O transparent semiconducting films

Journal of Applied Physics

Volumn 98, Issue 3, 2005, Pages

  Cai, Jianling ^a   Gong, Hao ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; P -TYPE CONDUCTIVITY; QUARTZ SUBSTRATES; SEEBECK TECHNIQUE;

ALUMINUM COMPOUNDS; ENERGY DISPERSIVE SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUARTZ; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 23944525867     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1997293     Document Type: Article

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