In situ Co/SiC(N,H) capping layers for Cu/Low-k interconnects

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 588-590

  Yang, C C ^a,b   Li, B ^c   Shobha, H ^a,b   Nguyen, S ^a,b   Grill, A ^a,b   Ye, W ^d   Aubuchon, J ^d   Shek, M ^d   Edelstein, D ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

^c IBM MICROELECTRONICS   (United States)

^d APPLIED MATERIALS INC   (United States)

Author keywords

Cobalt; electromigration (EM); in situ capping process; selective deposition

Indexed keywords

CAP THICKNESS; CAPPING LAYER; CAPPING PROCESS; CO FILMS; CU/LOW-K INTERCONNECTS; EX SITU; IN SITU CAPPING PROCESS; IN-SITU; LIFETIME ENHANCEMENT; RESISTANCE ENHANCEMENT; SELECTIVE DEPOSITION;

CHEMICAL VAPOR DEPOSITION; COBALT;

ELECTROMIGRATION;

EID: 84862789237     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2183850     Document Type: Article

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