Enhancement in light emission efficiency of Si nanocrystal light-emitting diodes by a surface plasmon coupling

Applied Physics Letters

Volumn 100, Issue 18, 2012, Pages

  Huh, Chul ^a   Choi, Chel Jong ^b   Kim, Wanjoong ^a   Kyu Kim, Bong ^a   Park, Byoung Jun ^a   Jang, Eun Hye ^a   Kim, Sang Hyeob ^a   Yong Sung, Gun ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

2-FACTORS; AU NANOPARTICLE; ELECTRICAL CHARACTERISTIC; LIGHT EMISSION EFFICIENCY; LIGHT OUTPUT POWER; OXIDE INTERFACES; PHOTOLUMINESCENCE INTENSITIES; RESONANCE MODE; SCHOTTKY BARRIERS; SI NANOCRYSTAL; STRONG COUPLING; SURFACE PLASMON COUPLING; SURFACE PLASMONS;

ELECTRIC PROPERTIES; GOLD; GOLD ALLOYS; INDIUM COMPOUNDS; LIGHT EMISSION; NANOCRYSTALS; SCHOTTKY BARRIER DIODES; SILICON; SILICON CARBIDE; TIN; TIN OXIDES;

LIGHT EMITTING DIODES;

EID: 84862571107     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4711033     Document Type: Article

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