Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Allegre J ^a   Lefebvre, P ^a   Juillaguet, S ^a   Knap, W ^a   Camassel, J ^a   Chen, Q ^b   Khan, M A ^b  

^a CNRS   (France)

^b APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; STIMULATED EMISSION; SUBSTRATES;

EXCITATION DENSITY; NITROGEN LASERS; SINGLE QUANTUM WELLS (SQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 84862403027     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001605     Document Type: Article

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