VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures

Nano Letters

Volumn 12, Issue 6, 2012, Pages 2888-2893

  Tateno, Kouta ^a   Zhang, Guoqiang ^a   Gotoh, Hideki ^a   Sogawa, Tetsuomi ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

heterostructure; InAsP; nanowire; quantum dot; VLS growth; wurtzite

Indexed keywords

FINITE-DIFFERENCE TIME-DOMAIN (FDTD) METHODS; FLOW RATIOS; HIGH PH; INASP; INP; NANOWIRE GROWTH; REACTION SPECIES; RESIDENCE TIME; SHORT DIFFUSION LENGTHS; SOURCE GAS; SURFACE SPECIES; VLS GROWTH; WURTZITES;

FINITE DIFFERENCE TIME DOMAIN METHOD; HETEROJUNCTIONS; NANOWIRES; SEMICONDUCTOR QUANTUM DOTS; ZINC SULFIDE;

ECOLOGY;

INDIUM; INDIUM ARSENIDE; INDIUM PHOSPHIDE; NANOTUBE; ORGANOARSENIC DERIVATIVE; PHOSPHINE DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; INDIUM; MATERIALS TESTING; NANOTUBES; PARTICLE SIZE; PHOSPHINES; QUANTUM DOTS;

EID: 84862274739     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300482n     Document Type: Article

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