Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy

Optical Materials Express

Volumn 1, Issue 1, 2011, Pages 78-84

  Metcalfe, Grace D ^a   Readinger, Eric D ^a,b   Enck, Ryan ^a   Shen, Hongen ^a   Wraback, Michael ^a   Woodward, Nathaniel T ^c   Poplawsky, Jon ^c   Dierolf, Volkmar ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Veeco Instruments Inc   (United States)

^c LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; COMBINED EXCITATION-EMISSION SPECTROSCOPY; HIGHLY SENSITIVE; HOST MATERIALS; IN-SITU; LUMINESCENCE SPECTROSCOPY; ND-DOPED; NEAR-INFRARED PHOTOLUMINESCENCE; PHOTO-LUMINESCENCE EXCITATION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SUBSTRATE TEMPERATURE;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

NEODYMIUM;

EID: 84862133305     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.1.000078     Document Type: Article

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