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Applied Physics Letters

Volumn 92, Issue 6, 2008, Pages

GaN doped with neodymium by plasma-assisted molecular beam epitaxy

(4) Readinger, E D a Metcalfe, G D a Shen, H a Wraback, M a

a U S ARMY RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GALLIUM NITRIDE; NEODYMIUM COMPOUNDS; RARE EARTH ELEMENTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

LUMINESCENCE INTENSITIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SUBSTITUTIONAL DOPING;

MOLECULAR BEAM EPITAXY;

EID: 39349100148 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2844850 Document Type: Article

Times cited : (26)

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