Excitonic lifetimes in single GaAs quantum dots fabricated by local droplet etching

New Journal of Physics

Volumn 14, Issue , 2012, Pages

  Heyn, Ch ^a   Strelow, Ch ^a   Hansen, W ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIEXCITONS; COMMON MODELS; DECAY TIME; DROPLET ETCHINGS; EMISSION ENERGIES; EXCITATION POWER; EXCITON LIFETIME; GAAS; NANOHOLES; OPTICAL EMISSIONS; PEAK INTENSITY; QUASI-RESONANT EXCITATION; RADIATIVE LIFETIME; RATE MODELS; SELF-ASSEMBLED; THREE-LEVEL; TIME-DEPENDENT;

DROPS; ETCHING; EXCITONS; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

GALLIUM ARSENIDE;

EID: 84862083309     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/14/5/053004     Document Type: Article

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