Work function investigation in advanced metal gate-HfO2-SiO2 systems with bevel structures

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn 2006-January, Issue , 2006, Pages 109-112

  Kuriyama, Atsushi ^a,c,d   Faynot, Olivier ^a   Brévard, Laurent ^a   Tozzo, Amélie ^a   Clerc, Laurence ^a   Deleonibus, Simon ^a   Mitard, Jérôme ^a,b   Vidal, Vincent ^a,b   Cristoloveanu, Sorin ^c   Iwai, Hiroshi ^d  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM OXIDES; LEAKAGE CURRENTS; LOW-K DIELECTRIC; POLYCRYSTALLINE MATERIALS; SILICA; SOLID STATE DEVICES; TITANIUM NITRIDE; WORK FUNCTION;

CHEMICAL VAPOR DEPOSITIONS (CVD); DIELECTRIC STACK; FUNCTION VARIATION; HIGH TEMPERATURE; METAL GATE; OXIDE STRUCTURES; PINNING LEVEL; POLY-SI GATES;

CHEMICAL VAPOR DEPOSITION;

EID: 84862020631     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/essder.2006.307650     Document Type: Conference Paper

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