Measuring the temperature of a mesoscopic electron system by means of single electron statistics

Applied Physics Letters

Volumn 96, Issue 11, 2010, Pages

  Prati, Enrico ^a   Belli, Matteo ^a   Fanciulli, Marco ^a,b   Ferrari, Giorgio ^c  

^a CNR   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE FLUCTUATIONS; ELECTRON SYSTEMS; GRAND CANONICAL ENSEMBLE; MESOSCOPIC SYSTEMS; MESOSCOPICS; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NMOSFETS; SINGLE ELECTRON; TEMPERATURE DEPENDENT; TIME DOMAIN;

DEFECTS; ELECTRON GAS; ELECTRONS; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SUPERCONDUCTING MATERIALS;

TWO DIMENSIONAL ELECTRON GAS;

EID: 77949720410     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3365204     Document Type: Article

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