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Volumn 100, Issue 20, 2012, Pages

Improved conductivity and long-term stability of sulfur-passivated n-GaAs nanowires

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; LONG TERM STABILITY; PASSIVATION METHODS; POLYSULFIDE SOLUTION; RECOMBINATION MODEL; SURFACE PASSIVATION; SURFACE TRAP DENSITY;

EID: 84861800045     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4719675     Document Type: Article
Times cited : (21)

References (14)
  • 12
    • 84863902587 scopus 로고    scopus 로고
    • Photoluminescence model of sulfur passivated p-InP nanowires
    • (submitted).
    • N. Tajik, C. M. Haapamaki, and R. R. LaPierre, Photoluminescence model of sulfur passivated p-InP nanowires., Nanotechnology (submitted).
    • Nanotechnology
    • Tajik, N.1    Haapamaki, C.M.2    Lapierre, R.R.3
  • 13
    • 79955834747 scopus 로고    scopus 로고
    • 10.1088/0957-4484/22/24/245304
    • A. C. E. Chia and R. R. LaPierre, Nanotechnology 22, 245304 (2011). 10.1088/0957-4484/22/24/245304
    • (2011) Nanotechnology , vol.22 , pp. 245304
    • Chia, A.C.E.1    Lapierre, R.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.