Increase of the photoluminescence intensity of InP nanowires by photoassisted surface passivation

Journal of the American Chemical Society

Volumn 127, Issue 35, 2005, Pages 12357-12362

  Van Vugt, Lambert K ^a   Veen, Sandra J ^a   Bakkers, Erik P A M ^b   Roest, Aarnoud L ^c   Vanmaekelbergh, Daniel ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALCOHOLS; ETCHING; NANOSTRUCTURED MATERIALS; PASSIVATION; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS;

LIGANDS; NANOWIRES; PHOTOASSOCIATED SURFACE PASSIVATION; PHOTOGENERATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

BUTANOL; INDIUM; LIGAND; OXIDE; PHOSPHORUS; QUANTUM DOT; SCAVENGER; TRIOCTYLPHOSPHINE OXIDE;

ARTICLE; CRYSTALLIZATION; DISSOLUTION; ELECTRON; OSCILLATION; OXIDATION; PHOTOLUMINESCENCE; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 24644482323     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja051860o     Document Type: Article

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