In-depth study on the effect of active-area scale-down of solution-processed TiO x

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 869-871

  Jung, Seungjae ^a   Kong, Jaemin ^a   Kim, Tae Wook ^a   Song, Sunghoon ^a   Lee, Kwanghee ^a   Lee, Takhee ^a   Hwang, Hyunsang ^a   Jeon, Sanghun ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Defect; joule heating; scale down; solution processing; titanium oxide; via hole

Indexed keywords

ACTIVE AREA; EXTRINSIC DEFECTS; IN-DEPTH STUDY; MEMORY PERFORMANCE; NONUNIFORMITY; OPERATION VOLTAGE; RELIABILITY CHARACTERISTICS; RESISTANCE STATE; SCALE-DOWN; SOLUTION-PROCESSED; SOLUTION-PROCESSING; SWITCHING SPEED; TIO; VIA-HOLE;

JOULE HEATING; TITANIUM; TITANIUM OXIDES;

DEFECTS;

EID: 84861657438     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2190376     Document Type: Article

References (12)

1. M. Lee, S. Han, S. Jeon, B. Park, B. Kang, S. Ahn, K. Kim, C. Lee, C. Kim, I. Yoo, D. Seo, X. Li, J. Park, J. Lee, and Y. Park, "Electrical manipulation of nanofilaments in transition-metal oxides for resistancebased memory," Nano Lett., vol. 9, no. 4, pp. 1476-1481, Mar. 2009.
2. H. Lee, Y. Chen, P. Chen, T.Wu, F. Chen, C.Wang, P. Tzeng, M. Tsai, and C. Lien, "Low-power and nanosecond switching in robust hafnium oxide resistive memory with a thin Ti cap," IEEE Electron Device Lett., vol. 31, no. 1, pp. 44-46, Jan. 2010.
3. B. Sun, Y. Liu, L. Liu, N. Xu, Y. Wang, X. Liu, R. Han, and J. Kang, "Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices," J. Appl. Phys., vol. 105, no. 6, pp. 061630-1-061630-4, Mar. 2009.
4. S. Kim, H. Moon, D. Gupta, S. Yoo, and Y. Choi, "Resistive switching characteristics of sol-gel zinc oxide films for flexible memory applications," IEEE Trans. Electron Devices, vol. 56, no. 4, pp. 696-699, Apr. 2009.
5. D. Kwon, K. Kim, J. Jang, J. Jeon, M. Lee, G. Kim, X. Li, G. Park, B. Lee, S. Han, M. Kim, and C. Hwang, "Atomic structure of conducting nanofilaments in TiO2 resistive switching memory," Nat. Nanotech., vol. 5, no. 2, pp. 148-153, Feb. 2010.
6. S. Jung, J. Kong, S. Song, K. Lee, T. Lee, H. Hwang, and S. Jeon, "Resistive switching characteristics of solution-processed transparent TiOx for nonvolatile memory application," J. Electrochem. Soc., vol. 157, no. 11, pp. H1042-H1045, Sep. 2010.
7. N. Gergel-Hackett, B. Hamadani, B. Dunlap, J. Suehle, C. Richter, C. Hacker, and D. Gundlach, "A flexible solution-processed memristor," IEEE Electron Device Lett., vol. 30, no. 7, pp. 706-708, Jul. 2009.
8. C. Lin, C. Lin, C. Huanga, C. Lin, and T. Tseng, "Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films," Surf. Coat. Technol., vol. 202, no. 4-7, pp. 1319-1322, Dec. 2007. (Pubitemid 350082286)
9. D. Seong, J. Park, N. Lee, M. Hasan, S. Jung, H. Choi, J. Lee, M. Jo, W. Lee, S. Park, S. Kim, Y. Jang, Y. Lee, M. Sung, D. Kil, Y. Hwang, S. Chung, S. Hong, J. Roh, and H. Hwang, "Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications," in IEDM Tech. Dig., 2009, pp. 1-4.
10. T. Kim, H. Choi, S. Oh, M. Jo, G. Wang, B. Cho, D. Kim, H. Hwang, and T. Lee, "Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure," Nanotechnology, vol. 20, no. 2, p. 025201, Jan. 2009.
11. J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K. Biju, S. Kim, S. Park, and H. Hwang, "Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications," in IEDM Tech. Dig., 2010, pp. 19.5.1-19.5.4.
12. I. Baek, M. Lee, S. Seo, M. Lee, D. Seo, D. Suh, J. Park, S. Park, H. Kim, I. Yoo, U. Chung, and J. Moon, "Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses," in IEDM Tech. Dig., 2004, pp. 587-590. (Pubitemid 40928360)