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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 282, Issue , 2012, Pages 100-107

Conductive layers in diamond formed by hydrogen ion implantation and annealing

(6) Popov, V P a Safronov, L N a Naumova, O V a Nikolaev, D V a Kupriyanov, I N b Palyanov, Yu N b

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b SOBOLEV INSTITUTE OF GEOLOGY AND MINERALOGY (Russian Federation)

Author keywords

Diamond; HPHT annealing; Hydrogen implantation; VRH conductivity

Indexed keywords

AFM; ANNEALED SAMPLES; ANNEALING REGIMES; ANNEALING TEMPERATURES; BURIED LAYER; CONDUCTIVE LAYER; DECAY LENGTH; DEFECTIVE LAYERS; DIAMOND STRUCTURES; ELECTRONIC SYSTEMS; FLUENCES; GEOMETRICAL PROPERTY; GRAPHITIC CARBONS; HIGH CONDUCTIVITY; HIGH PRESSURE; HIGH TEMPERATURE; HIGHER DIMENSIONS; HPHT SYNTHETIC DIAMONDS; HYDROGEN IMPLANTATION; HYDROGEN ION IMPLANTATION; HYDROGEN MOLECULAR ION; LOCALIZED STATE; MULTI-LAYERED; ORDERS OF MAGNITUDE; SHEET RESISTIVITY; STABLE PHASE; TEMPERATURE DEPENDENCE; THERMAL-ANNEALING; TRANSPORT OF CHARGE; VACUUM-ANNEALING; VARIABLE-RANGE HOPPING; VRH CONDUCTIVITY; VRH MODEL; WIDE BAND GAP;

DIAMONDS; ELECTRIC PROPERTIES; GRAPHITE; HYDROGEN; ION IMPLANTATION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; VACUUM;

ANNEALING;

EID: 84861636930 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2011.08.050 Document Type: Conference Paper

Times cited : (27)

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