Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Orwa, J O ^a   Santori, C ^b   Fu, K M C ^b   Gibson, B ^a   Simpson, D ^a   Aharonovich, I ^a,e   Stacey, A ^a   Cimmino, A ^a   Balog, P ^c   Markham, M ^d   Twitchen, D ^d   Greentree, A D ^a   Beausoleil, R G ^b   Prawer, S ^a  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c Element Six Ltd   (United Kingdom)

^d ELEMENT SIX LTD   (United Kingdom)

^e HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AS-GROWN; CHEMICAL VAPOR DEPOSITION DIAMOND; HIGH PURITY; HOST MATERIALS; IMPLANTATION FLUENCE; IMPLANTATION TEMPERATURE; NV CENTER; OPTICAL CENTER; QUANTUM INFORMATION SCIENCE; SENSING APPLICATIONS; TEMPERATURE RANGE;

ANNEALING; CHEMICAL VAPOR DEPOSITION; COLOR CENTERS; DIAMONDS; ION IMPLANTATION; NITROGEN; QUANTUM OPTICS;

OPTICAL PROPERTIES;

EID: 79955730004     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3573768     Document Type: Article

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