SCOPUS 정보 검색 플랫폼

Review of Scientific Instruments

Volumn 83, Issue 3, 2012, Pages

Gate effects on DNA translocation through silicon dioxide nanopore

(4) Yen, Pei Chun a Wang, Chung Hsuan a Hwang, Gwo Jen b Chou, Y C a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b ST JOHN'S UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DNA MOLECULES; DNA TRANSLOCATION; DWELL TIME; GATE VOLTAGES; IONIC CURRENT; SCATTER PLOTS; THEORETICAL RESULT;

MOLECULES; NANOPORES; SILICA;

DNA;

DNA; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; METABOLISM; MOTION; NANOPORE; TIME;

DNA; ELECTRIC CONDUCTIVITY; MOTION; NANOPORES; SILICON DIOXIDE; TIME FACTORS;

EID: 84861613439 PISSN: 00346748 EISSN: None Source Type: Journal
DOI: 10.1063/1.3692746 Document Type: Review

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.