A nonvolatile memory device made of a graphene nanoribbon and a multiferroic BiFeO 3 gate dielectric layer

Carbon

Volumn 50, Issue 10, 2012, Pages 3854-3858

  Jung, I ^a   Son, J Y ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; ASYMMETRIC HYSTERESIS; DIP-PEN NANOLITHOGRAPHY; FERROELECTRIC HYSTERESIS; FIELD-EFFECT; GATE DIELECTRIC LAYERS; GRAPHENE NANO-RIBBON; MEMORY WINDOW; MULTIFERROICS; NONVOLATILE MEMORY DEVICES; NONVOLATILE RANDOM ACCESS MEMORIES; P-TYPE; SEMICONDUCTING BEHAVIOR; SOURCE/DRAIN ELECTRODES;

NONVOLATILE STORAGE;

GATE DIELECTRICS;

EID: 84861597016     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2012.04.027     Document Type: Article

References (30)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, and S.V. Dubonos Electric field effect in atomically thin carbon films Science 306 5696 2004 666 669
2. K.S. Novoselov, D. Jiang, F. Schedin, T.J. Booth, V.V. Khotkevich, and S.V. Morozov Two-dimensional atomic crystals Proc Natl Acad Sci USA 102 30 2005 10451 10453
3. C. Lee, X.D. Wei, J.W. Kysar, and J. Hone Measurement of the elastic properties and intrinsic strength of monolayer graphene Science 321 5887 2008 385 388
4. K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, and K.S. Kim Large-scale pattern growth of graphene films for stretchable transparent electrodes Nature 457 7230 2009 706 710
5. Z.Q. Wei, D.B. Wang, S. Kim, S.Y. Kim, Y.K. Hu, and M.K. Yakes Nanoscale tunable reduction of graphene oxide for graphene electronics Science 328 5984 2010 1373 1376
6. J.H. Seol, I. Jo, A.L. Moore, L. Lindsay, Z.H. Aitken, and M.T. Pettes Two-dimensional phonon transport in supported graphene Science 328 5975 2010 213 216
7. W.W. Cai, A.L. Moore, Y.W. Zhu, X.S. Li, S.S. Chen, and L. Shi Thermal transport in suspended and supported monolayer graphene grown by chemical vapor deposition Nano Lett 10 5 2010 1645 1651
8. Z.Q. Wang, R.G. Xie, C.T. Bui, D. Liu, X.X. Ni, and B.W. Li Thermal transport in suspended and supported few-layer graphene Nano Lett 11 1 2011 113 118
9. A. Akturk, and N. Goldsman Electron transport and full-band electron-phonon interactions in graphene J Appl Phys 103 5 2008 053702
10. 2 Nat Nanotechnol 3 4 2008 206 209
11. H.A. Becerril, J. Mao, Z. Liu, R.M. Stoltenberg, Z. Bao, and Y. Chen Evaluation of solution-processed reduced graphene oxide films as transparent conductors ACS Nano 2 3 2008 463 470
12. P. Blake, P.D. Brimicombe, R.R. Nair, T.J. Booth, D. Jiang, and F. Schedin Graphene-based liquid crystal device Nano Lett 8 6 2008 1704 1708
13. S. Watcharotone, D.A. Dikin, S. Stankovich, R. Piner, I. Jung, and G.H.B. Dommett Graphene-silica composite thin films as transparent conductors Nano Lett 7 7 2007 1888 1892
14. X.T. Jia, M. Hofmann, V. Meunier, B.G. Sumpter, J. Campos-Delgado, and J.M. Romo-Herrera Controlled formation of sharp zigzag and armchair edges in graphitic nanoribbons Science 323 5922 2009 1701 1705
15. X.L. Li, X.R. Wang, L. Zhang, S.W. Lee, and H.J. Dai Chemically derived, ultrasmooth graphene nanoribbon semiconductors Science 319 5867 2008 1229 1232
16. Y.S. Shin, J.Y. Son, M.H. Jo, Y.H. Shin, and H.M. Jang High-mobility graphene nanoribbons prepared using polystyrene dip-pen nanolithography J Am Chem Soc 133 15 2011 5623 5625
17. M. Dawber, K.M. Rabe, and J.F. Scott Physics of thin-film ferroelectric oxides Rev Mod Phys 77 4 2005 1083 1130
18. Y. Saito, H. Takao, T. Tani, T. Nonoyama, K. Takatori, and T. Homma Lead-free piezoceramics Nature 432 7013 2004 84 87
19. 3 multiferroic thin film heterostructures Science 299 5613 2003 1719 1722
20. 3 ceramics synthesized by rapid liquid phase sintering Appl Phys Lett 84 10 2004 1731 1733
21. H. Huang Solar energy: ferroelectric photovoltaics Nat Photon 4 3 2010 134 135
22. B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J. Lee, and W. Jo Lanthanum-substituted bismuth titanate for use in non-volatile memories Nature 401 6754 1999 682 684
23. J.F. Scott, and C.A.P.D. Araujo Ferroelectric memories Science 246 4936 1989 1400 1405
24. J.Y. Son, S. Ryu, Y.-C. Park, Y.-T. Lim, Y.-S. Shin, and Y.-H. Shin A nonvolatile memory device made of a ferroelectric polymer gate nanodot and a single-walled carbon nanotube ACS Nano 4 12 2010 7315 7320
25. X. Hong, A. Posadas, K. Zou, C.H. Ahn, and J. Zhu High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides Phys Rev Lett 102 13 2009 136808-1 136808-4
26. Y.-L. Lee, S. Kim, C. Park, J. Ihm, and Y.-W. Son Controlling half-metallicity of graphene nanoribbons by using a ferroelectric polymer ACS Nano 4 3 2010 1345 1350
27. Y. Zheng, G.X. Ni, C.T. Toh, C.Y. Tan, K. Yao, and B. Ozyilmaz Graphene field-effect transistors with ferroelectric gating Phys Rev Lett 105 16 2010 166602
28. X.R. Wang, X.L. Li, L. Zhang, Y. Yoon, P.K. Weber, and H.L. Wang N-doping of graphene through electrothermal reactions with ammonia Science 324 5928 2009 768 771
29. B. Guo, Q. Liu, E. Chen, H. Zhu, L. Fang, and J.R. Gong Controllable N-doping of graphene Nano Lett 10 12 2010 4975 4980
30. Schroder DK. Semiconductor material and device characterization. New York: Wiley; 2006.