Environment-controlled tethering by aggregation and growth of phosphonic acid monolayers on silicon oxide

Langmuir

Volumn 28, Issue 21, 2012, Pages 8046-8051

  Vega, Abraham ^a   Thissen, Peter ^a   Chabal, Yves J ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; BI-LAYER; DRY ENVIRONMENT; HUMID ENVIRONMENT; HUMIDITY LEVELS; IN-SITU; INTERFACIAL WATER MOLECULES; OCTADECYLPHOSPHONIC ACIDS; PHOSPHONIC ACIDS; PHYSISORBED; PRESENCE OF WATER; PROCESSING TIME; ROBUST METHODS; SILICON OXIDE SURFACES; SURFACE MODIFICATION AGENTS; SURFACE OH GROUP;

ATMOSPHERIC HUMIDITY; CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDUSTRIAL APPLICATIONS; MONOLAYERS; ORGANIC ACIDS; SILICON OXIDES;

AGGLOMERATION;

PHOSPHONIC ACID DERIVATIVE; PHOSPHOROUS ACID; SILICON DIOXIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; INFRARED SPECTROSCOPY; QUANTUM THEORY; SURFACE PROPERTY;

MEMBRANES, ARTIFICIAL; PHOSPHONIC ACIDS; PHOSPHOROUS ACIDS; QUANTUM THEORY; SILICON DIOXIDE; SPECTROSCOPY, FOURIER TRANSFORM INFRARED; SURFACE PROPERTIES;

EID: 84861595114     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la300709n     Document Type: Article

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