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Applied Physics Letters

Volumn 98, Issue 18, 2011, Pages

Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes

(4) Bogdanov, S a Nguyen, B M a Hoang, A M a Razeghi, M a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CURRENT LEVELS; CUTOFF WAVELENGTHS; DIELECTRIC PASSIVATION; DIRECT CONTACT; DOPING PROFILES; INAS/GASB SUPERLATTICES; LONG-WAVELENGTH INFRARED; ORDERS OF MAGNITUDE; SURFACE LEAKAGE CURRENTS;

DOPING (ADDITIVES); INDIUM ANTIMONIDES; INFRARED RADIATION; LEAKAGE CURRENTS; OPTOELECTRONIC DEVICES; PASSIVATION; SILICON COMPOUNDS;

SUPERLATTICES;

EID: 79957454497 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3584853 Document Type: Article

Times cited : (26)

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