Synthesis, growth and characterization of tunable band gap nanostructured copper(I) oxide (Cu 2O) semiconductor

Journal of Advanced Microscopy Research

Volumn 6, Issue 3, 2011, Pages 186-192

  Singh, Rita ^a   Ganesan, V ^b   Das, B ^a  

^a UNIVERSITY OF LUCKNOW   (India)

^b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

Crystal growth; Cu 2O nanomaterials; Nanospheres; Semiconducting oxide surfaces; Spiral growth features; Tunable band gap; XRD

Indexed keywords

AFM; ANNEALING CONDITION; ATOMIC FORCE; BAND GAP ENERGY; CUPRIC OXIDE; CUPROUS OXIDE; ELECTRICAL RESISTIVITY; EXCITATION MODE; EXCITATION PEAKS; FOUR-PROBE METHODS; GROWTH CHARACTERISTIC; NANOSTRUCTURED COPPER; NANOSTRUCTURED CU; PHOTOLUMINESCENCE SPECTRUM; POWDER X RAY DIFFRACTION; ROOM TEMPERATURE; SEMICONDUCTING OXIDE; SINGLE PHASE; SPECTRAL EMISSION; SPIRAL GROWTH; SURFACE CHARACTERIZATION; TEMPERATURE RANGE; THERMAL-ANNEALING; TRANSMISSION ELECTRON MICROSCOPY TEM; TUNABLE BAND-GAP; WET CHEMICAL ROUTE; XRD;

ANNEALING; ATMOSPHERIC PRESSURE; COPPER; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ENERGY GAP; IODINE; NANORODS; NANOSPHERES; PELLETIZING; SCANNING ELECTRON MICROSCOPY; SOLAR CONTROL FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR GROWTH;

EID: 84861489063     PISSN: 21567573     EISSN: 21567581     Source Type: Journal    
DOI: 10.1166/jamr.2011.1072     Document Type: Article

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