Laser enhanced diffusion of nitrogen in high purity semi-insulating 4H silicon carbide substrates for non-rectifying contact formation to photoconductive semiconductor switches

Digest of Technical Papers-IEEE International Pulsed Power Conference

Volumn , Issue , 2011, Pages 1099-1101

  Sullivan III, W ^a   Hettler, C ^a   Dickens, J ^a  

^a Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; BULK DAMAGES; CONTACT FORMATION; ENHANCED DIFFUSION; EXPERIMENTAL DATA; GAS IMMERSION LASER DOPING; HEAVILY DOPED; HIGH PURITY; HIGH TEMPERATURE; HIGH-ENERGY IONS; LOW COSTS; ORDERS OF MAGNITUDE; PEAK IRRADIANCE; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; SELECTIVE AREAS; SEMI-INSULATING; SURFACE CONCENTRATION; SURFACE LAYERS; THERMAL MODEL;

ION IMPLANTATION; OHMIC CONTACTS; PHOTOCONDUCTIVE SWITCHES; SEMICONDUCTOR DOPING; SILICON CARBIDE;

PULSED LASERS;

EID: 84861362168     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPC.2011.6191650     Document Type: Conference Paper

References (6)

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