Carrier transport mechanism of Se/n-type Si Schottky diodes

Journal of Alloys and Compounds

Volumn 534, Issue , 2012, Pages 37-41

  Janardhanam, V ^a   Park, Yang Kyu ^a   Ahn, Kwang Soon ^b   Choi, Chel Jong ^a  

^a Chonbuk National University   (South Korea)

^b Yeungnam University   (South Korea)

Author keywords

Poole Frenkel emission; Schottky barrier height; Schottky contacts; Schottky emission; Se; Si; Thermionic emission

Indexed keywords

BARRIER HEIGHTS; C-V CHARACTERISTIC; CAPACITANCE-VOLTAGE CHARACTERISTICS; CURRENT CONDUCTION MECHANISMS; CURRENT VOLTAGE; FORWARD BIAS; I-V AND C-V CHARACTERISTICS; IDEALITY FACTORS; INHOMOGENEITIES; IV CHARACTERISTICS; POOLE-FRENKEL EMISSION; POTENTIAL BARRIERS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY EMISSIONS; SI SCHOTTKY DIODE; SI SUBSTRATES; TRANSPORT MECHANISM;

SCHOTTKY BARRIER DIODES; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICON; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84861329414     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.04.031     Document Type: Article

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