Advanced high-voltage 4H-SiC Schottky rectifiers

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1871-1874

  Zhu, Lin ^a,b   Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Power Integrations   (United States)

Author keywords

4H SiC; Junction Barrier Schottky (JBS); Power; Schottky rectifier

Indexed keywords

LEAKAGE CURRENTS; NONMETALS; SCHOTTKY BARRIER DIODES; SILICON; SILICON CARBIDE;

4H-SIC; BLOCKING CAPABILITY; FAST SWITCHING; HIGH VOLTAGES; IMPROVED PERFORMANCE; JUNCTION BARRIER SCHOTTKY; JUNCTION BARRIER SCHOTTKY (JBS); LOW-LEAKAGE CURRENT; NOVEL DEVICES; ORDERS-OF-MAGNITUDE; P-I-N JUNCTIONS; POWER; REVERSE CHARACTERISTICS; REVERSE LEAKAGE CURRENT; SCHOTTKY; SCHOTTKY RECTIFIER; SCHOTTKY RECTIFIERS; SILICON CARBIDE DEVICES; TWO TYPES;

ELECTRIC RECTIFIERS;

EID: 49249133817     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926642     Document Type: Article

References (8)

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