Collection of photocarriers in Ga 1-xin xN yAs 1-y solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 707-710

  Kurtz, Sarah ^a   Geisz, J F ^a   Friedman, D J ^a   Ptak, A J ^a   King, R R ^b   Law, D C ^b   Karam, N H ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Spectrolab Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOCARRIERS;

ANNEALING; CHARGE CARRIERS; DOPING (ADDITIVES); PHOTOCURRENTS;

SOLAR CELLS;

EID: 84861277886     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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2. D.J. Friedman, et al., "1-eV Solar Cells with GaInNAs Active Layer," J. Cryst. Growth 195, 1998, pp. 409-415.
3. S.R. Kurtz, et al., "InGaAsN Solar Cells with 1.0 eV Bandgap, Lattice Matched to GaAs," Appl. Phys. Lett. 74, 1999, pp. 729-731.
4. R.R. King, et al., "Metamorphic III-V Materials, Sublattice Disorder, and Multijunctjon Solar Cell Approaches with over 37% Efficiency," 19th European PVSEC, 2004.
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10. S. Kurtz, et al., "Modeling of Electron Diffusion Length in GaInAsN Solar Cells," 28th IEEE PVSC, 2000, p. 1210.
11. A.J. Ptak, et al., "Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy," 31st IEEE PVSC, 2005.
12. P.R.C. Kent and A. Zunger, "Evolution of III-V Nitride Alloy Electronic Structure: The Localized to Debcalized Transition," Phys. Rev. Lett. 86, 2001, pp. 2613-2616.
13. S.R. Kurtz, et al., "Minority Carrier Diffusion and Defects in InGaAsN Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 80, 2002, pp. 1379-1381.
14. R.E. Welser, et al., "Minority Carrier Properties of Carbon-Doped GaInAsN Bipolar Transistors," J. Phys.: Condens. Matter 16, 2004, pp. 53373-53385.