Modeling of electron diffusion length in GaInAsN solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1210-1213

  Kurtz, Sarah ^a   Geisz, J F ^a   Friedman, D J ^a   Olson, J M ^a   Duda, A ^a   Karam, N H ^b   King, R R ^b   Ermer, J H ^b   Joslin, D E ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Spectrolab Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ENERGY GAP; SOLAR CELLS;

BAND EDGE; ELECTRON DIFFUSION LENGTH; GAAS; HOLE DIFFUSION LENGTH; INTERNAL QUANTUM EFFICIENCY; P-TYPE;

GALLIUM ALLOYS;

EID: 84949546943     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916106     Document Type: Conference Paper

References (6)

1. S. R. Kurtz, D. Myers, and J. M. Olson, "Projected Performance of Three- and Four-Junction Devices using GaAs and GaInP," presented at 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA 1997.
2. J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, and B. M. Keyes, "Photocurrent of 1 eV GaInNAs Lattice-Matched to GaAs," J Cryst Growth, vol. 195, pp. 401-408, 1998.
3. H. J. Hovel, Solar Cells, vol. 11. New York: Academic Press, 1975.
4. S. R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Banas, and B. E. Hammons, "InGaAsN Solar Cells with 1.0 eV Band Gap, Lattice Matched to GaAs," Appl Phys Lett, vol. 74, pp. 729-731, 1999.
5. F. Urbach, "The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids," Phys. Rev., vol. 92, pp. 1324, 1953.
6. D. J. Friedman, J. F. Geisz, S. R. Kurtz, and J. M. Olson, "1-eV GaInNAs Solar Cells for Ultrahigh-Efficiency Multijunction Devices," presented at 2nd World Conf. on Photovoltaic Energy Conversion, Vienna, 1998.