In situ studies on twinning and cracking proximal to insulator-metal transition in self-supported VO 2 /Si 3N 4 membranes

Journal of Materials Research

Volumn 27, Issue 11, 2012, Pages 1476-1481

  Balakrishnan, Viswanath ^a   Ko, Changhyun ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

fracture; metal insulator transition; transmission electron microscopy (TEM)

Indexed keywords

ACTIVE AREA; FILM CRACKING; FUNCTIONAL OXIDES; IN-SITU STUDY; INSULATOR METAL TRANSITION; MECHANICAL INSTABILITIES; MECHANICALLY STABLE; RESISTANCE CHANGE; SENSOR DEVICE; STRUCTURAL PHASE TRANSITION; STRUCTURAL STABILITIES; SYMMETRY CHANGES; TRANSMISSION ELECTRON MICROSCOPY TEM; VANADIUM DIOXIDE; VOLUME CHANGE;

CRACKS; ELECTROMECHANICAL DEVICES; FRACTURE; MEMS; SENSORS; SILICON; STABILITY; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 84861116561     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2012.93     Document Type: Article

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