Microtwinning in highly nonstoichiometric VOx thin films

Acta Materialia

Volumn 58, Issue 15, 2010, Pages 5009-5014

  Li, Jing ^a   Gauntt, Bryan D ^a   Dickey, Elizabeth C ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Bolometer materials; Nanocrystalline microstructure; Thin films; Transmission electron microscopy (TEM); Twinning

Indexed keywords

CRYSTALLINE LATTICE; EQUILIBRIUM SOLUBILITIES; FACE-CENTERED CUBIC; FINE STRUCTURES; HIGH DENSITY; MICROTWINNING; MICROTWINS; NANOCRYSTALLINE MICROSTRUCTURES; NANOCRYSTALLINE PHASE; NONSTOICHIOMETRIC; PULSED DC; SELECTED AREA ELECTRON DIFFRACTION PATTERN; TEM; TWIN PLANES;

BOLOMETERS; COALESCENCE; DC POWER TRANSMISSION; DEFECT DENSITY; DEFECTS; ELECTRON DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; INFRARED DETECTORS; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING; VANADIUM; VAPOR DEPOSITION;

NANOCRYSTALLINE MATERIALS;

EID: 77955421033     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2010.05.035     Document Type: Article

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