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Volumn 4, Issue 12, 2010, Pages 7373-7378

Control of the carrier Type in InAs nanocrystal films by predeposition incorporation of Cd

Author keywords

InAs; nanocrystal; photoconductivity; quantum dot

Indexed keywords

BULK SEMICONDUCTORS; CD ATOM; CRITICAL STEPS; ELECTRONIC APPLICATION; INAS; INAS NANOCRYSTALS; NANOCRYSTAL FILMS; P TYPE SEMICONDUCTOR; P-N HOMOJUNCTIONS; P-TYPE; PRE-DEPOSITION; QUANTUM DOT; SURFACE STATE;

EID: 78650752052     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn101772n     Document Type: Article
Times cited : (51)

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