Diameter and polarization-dependent raman scattering intensities of semiconductor nanowires

Nano Letters

Volumn 12, Issue 5, 2012, Pages 2266-2271

  Lopez, Francisco J ^a,b   Hyun, Jerome K ^a   Givan, Uri ^a,c   Kim, In Soo ^a   Holsteen, Aaron L ^a   Lauhon, Lincoln J ^a  

^a Northwestern University   (United States)

^b UNIVERSITY OF OREGON   (United States)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

FDTD; modeling; Nanowire; optical properties; Raman

Indexed keywords

ANTI-STOKES INTENSITIES; AXIAL GROWTH; BROAD BANDS; ELECTROMAGNETIC MODES; ELECTROMAGNETIC RESONANCE; FDTD; FINITE DIFFERENCE TIME DOMAIN SIMULATIONS; HOMOEPITAXIAL; LATTICE TEMPERATURES; MULTIPLE POLARIZATIONS; RADIAL GROWTH; RAMAN; RAMAN SCATTERING INTENSITY; SCATTERED LIGHT; SEMICONDUCTOR NANOWIRE; SILICON NANOWIRES; VAPOR-LIQUID-SOLID;

MODELS; OPTICAL PROPERTIES; POLARIZATION; RAMAN SCATTERING; SILICON WAFERS; VAPORS;

NANOWIRES;

EID: 84861078822     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204537d     Document Type: Article

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