Scatterfield microscopy of 22 nm node patterned defects using visible and DUV light

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8324, Issue , 2012, Pages

  Barnes, Bryan M ^a   Sohn, Yeung Joon ^a   Goasmat, Francois ^a   Zhou, Hui ^a   Silver, Richard M ^a   Arceo, Abraham ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b SEMATECH   (United States)

Author keywords

Bright field microscopy; Dark field microscopy; Defect detection; Illumination optimization; Scatterfield optical microscopy

Indexed keywords

BRIGHT-FIELD MICROSCOPY; DARK FIELD MICROSCOPY; DEFECT ARRAYS; DEFECT DETECTION; DETECTABILITY; EXPERIMENTAL STUDIES; FOCUS POSITIONS; ILLUMINATION OPTIMIZATIONS; INCIDENT ANGLES; LINEAR POLARIZATION; NOVEL ARCHITECTURE; PATTERNED DEFECTS; PRECISE CONTROL; SOURCE OPTIMIZATION;

NANOTECHNOLOGY; OPTICAL MICROSCOPY; OPTIMIZATION; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; UNITS OF MEASUREMENT;

DEFECTS;

EID: 84861050067     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.917286     Document Type: Conference Paper

References (9)

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