In Situ TEM near-field optical probing of nanoscale silicon crystallization

Nano Letters

Volumn 12, Issue 5, 2012, Pages 2524-2529

  Xiang, Bin ^a,b   Hwang, David J ^c   In, Jung Bin ^d   Ryu, Sang Gil ^d   Yoo, Jae Hyuck ^d   Dubon, Oscar ^a,b   Minor, Andrew M ^a,b   Grigoropoulos, Costas P ^d  

^a University of California Berkeley   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Stony Brook University   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

amorphous Si; crystallization; In situ; laser; nanoscale confinement; near field probing; TEM

Indexed keywords

AMORPHOUS PRECURSORS; AMORPHOUS SI; DEVICE CONFIGURATIONS; FLEXIBLE SUBSTRATE; IN-SITU; IN-SITU TEM; LASER ILLUMINATION; LASER MELTING; LASER PROCESS; LASER SPOT SIZE; NANO SCALE; NANO-SCALE CONFINEMENTS; NANOELECTRONIC DEVICES; NANOMETRIC DIMENSIONS; NEAR-FIELD; NEAR-FIELD PROBING; OPTICAL NEAR FIELD; OPTICAL PROBING; REAL-TIME OBSERVATION; SMALL REGION; THERMAL-ANNEALING; TRANSMISSION ELECTRON MICROSCOPE;

CRYSTALLIZATION; LASER PULSES; LASERS; NANOTECHNOLOGY; SILICON; SILICON WAFERS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 84861029929     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3007352     Document Type: Article

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