In situ laser crystallization of amorphous silicon: Controlled nanosecond studies in the dynamic transmission electron microscope

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Taheri, M L ^a   McGowan, S ^b   Nikolova, L ^c   Evans, J E ^d,e   Teslich, N ^d   Lu, J P ^f   Lagrange, T ^d   Rosei, F ^c   Siwick, B J ^b   Browning, N D ^d,e,g  

^a Drexel University   (United States)

^b MCGILL UNIVERSITY   (Canada)

^c INRS EMT   (Canada)

^d LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f PALO ALTO RESEARCH CENTER   (United States)

^g University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; DEFECT CONCENTRATIONS; DEPOSITED ENERGY; GRAIN SIZE; IN-SITU; IN-SITU METHODS; LASER CRYSTALLIZATION; LASER ENERGIES; NANOSECOND LASERS; NUCLEATION AND GROWTH; PROCESSING CONDITION; TRANSMISSION ELECTRON MICROSCOPE;

CRYSTALLIZATION; ELECTRON MICROSCOPES; FILM GROWTH; MICROSTRUCTURAL EVOLUTION; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 77956206684     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3422473     Document Type: Article

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