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Volumn 109, Issue 8, 2011, Pages
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Determining the defect density of states by temperature derivative admittance spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
ADMITTANCE SPECTROSCOPIES;
DATA POINTS;
DEEP DEFECTS;
DEEP LEVEL;
DEFECT ENERGY;
DENSITY OF DEFECTS;
DENSITY OF STATE;
DERIVATIVE METHOD;
FREQUENCY RANGES;
LOW FREQUENCY;
MULTIPLE DEFECTS;
OBSERVATION WINDOW;
PARASITIC CIRCUIT EFFECTS;
SIMULTANEOUS OBSERVATION;
SYSTEM NOISE;
TEMPERATURE DERIVATIVES;
ACTIVATION ENERGY;
ARRHENIUS PLOTS;
DEFECTS;
ELECTRIC ADMITTANCE;
SPECTROSCOPIC ANALYSIS;
DEFECT DENSITY;
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EID: 79955714653
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3573538 Document Type: Article |
Times cited : (23)
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References (13)
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