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Volumn 94, Issue 12, 2010, Pages 2073-2077

A method to measure resistivity, mobility, and absorber thickness in thin-film solar cells with application to CdTe devices

Author keywords

Absorber thickness; Admittance spectroscopy; Back contact; Capacitancevoltage; CdTe; Mobility

Indexed keywords

ABSORBER THICKNESS; ADMITTANCE SPECTROSCOPIES; BACK CONTACT; CAPACITANCE VOLTAGE; CDTE; MOBILITY;

EID: 77957676077     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.06.018     Document Type: Article
Times cited : (18)

References (8)
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    • D. Albin, R. Dhere, X. Wu, T. Gessert, M.J. Romero, Y. Yan, and S. Asher Perturbation of copper substitutional defect concentrations in CdS/CdTe heterojunction solar cell devices Mater. Res. Soc. Symp. Proc. 719 2002 383 388
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    • Carrier transport properties of HPB CdZnTe and THM CdTe:Cl
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    • Simulated admittance spectroscopy measurements of high concentration deep level defects in CdTe thin-film solar cells
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.