Dielectric oxynitride LaTiOxNy thin films deposited by reactive radio-frequency sputtering

Thin Solid Films

Volumn 520, Issue 14, 2012, Pages 4536-4540

  Ziani, A ^a   Le Paven Thivet, C ^a   Fasquelle, D ^b   Le Gendre, L ^a   Benzerga, R ^a   Tessier, F ^a   Chevire F ^a   Carru, J C ^b   Sharaiha, A ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b UNIVERSITÉ DU LITTORAL CÔTE D OPALE   (France)

Author keywords

Epitaxy; Nitrides; Permittivity; Perovskites; Sputtering; Thin films

Indexed keywords

DIELECTRIC CHARACTERIZATION; FREQUENCY RANGES; HIGH TEMPERATURE; METAL-INSULATOR-METAL STRUCTURES; MGO; NB-DOPED SRTIO; OXYNITRIDES; PERMITTIVITY AND LOSS; RADIO FREQUENCY SPUTTERING; RF-SPUTTERING; SINGLE-CRYSTALLINE; TRANSPARENT FILMS;

EPITAXIAL GROWTH; NITRIDES; NITROGEN; NITROGEN PLASMA; PERMITTIVITY; PEROVSKITE; SPUTTERING;

THIN FILMS;

EID: 84860299107     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.192     Document Type: Conference Paper

References (26)

1. M. Dawber, K.M. Rabe, and J.F. Scott Rev. Mod. Phys. 77 2005 1083
2. N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Hong, A. Kingon, H. Kohlstedt, N.J. Park, G.B. Stephenson, I. Stolitchnov, A.K. Taganstev, D.V. Taylor, T. Yamada, and S. Streiffer J. Appl. Phys. 100 2006 051606
3. R. Marchand, Y. Laurent, J. Guyader, P. L'haridon, and P. Verdier J. Eur. Ceram. Soc. 8 1991 197
4. F. Tessier, and R. Marchand J. Solid State Chem. 171 2003 143
5. R. Aguiar, D. Logvinovitch, A. Weidenkaff, A. Rachel, A. Reller, and S.G. Ebbinghaus Dyes Pigm. 76 2008 70
6. M. Jansen, and H.P. Letschert Nature 404 2000 980
7. F. Tessier, P. Maillard, F. Cheviré, K. Domen, and S. Kikkawa J. Ceram. Soc. Jpn. 117 2009 1
8. R. Asahi, T. Morikawa, T. Ohwaki, K. Aoki, and Y. Taga Science 293 2001 269
9. A. Kasahara, K. Nukumizu, G. Hitoki, T. Takata, J.N. Kondo, M. Hara, H. Kobayashi, and K. Domen J. Phys. Chem. A 106 2002 6750
10. C. Le Paven-Thivet, A. Ishikawa, A. Ziani, L. Le Gendre, M. Yoshida, J. Kubota, F. Tessier, and K. Domen J. Phys. Chem. C 113 2009 6156
11. N. Kohara, T. Sawada, M. Kitawa, T. Uenoyama, European Patent 1078998A2, 28 Feb. 2001.
12. X.B. Lu, and Z.G. Liu J. Electron. Mater. 30 2001 554
13. C. Le Paven-Thivet, L. Le Gendre, J. Le Castrec, F. Cheviré, F. Tessier, and J. Pinel Prog. Solid State Chem. 35 2007 299
14. A. Ziani, C. Le Paven-Thivet, L. Le Gendre, D. Fasquelle, J.C. Carru, F. Tessier, and J. Pinel Thin Solid Films 517 2008 544
15. D. Kubelka, and L. Munk Z. Tech. Phys. 12 1931 593
16. R. Swanepoel J. Phys. E Sci. Instrum. 16 1983 1214
17. C.M. Fang, G.A. de Wijs, E. Orhan, G. de With, R.A. de Groot, H.T. Hintzen, and R. Marchand J. Phys. Chem. Solids 64 2003 281
18. M. Yashima, M. Saito, H. Nakano, T. Takata, K. Ogisu, and K. Domen Chem. Commun. 46 2010 4704
19. A. Perrin, M. Guilloux-Viry, C. Thivet, J.C. Jegaden, M. Sergent, J. Le Lannic, Jeol News 30E (1992) 10.
20. Y.-I. Kim, W. Si, P.M. Woodward, E. Sutter, S. Park, and T. Vogt Chem. Mater. 19 2007 618
21. S.-J. Lee, S.-E. Moon, M.-H. Kwak, Y.-T. Kim, H.-C. Ryu, and S.-K. Han Appl. Phys. Lett. 82 2003 2133
22. B. Ravel, Y.-I. Kim, P.M. Woodward, and C.M. Fang Phys. Rev. B 73 2006 184121
23. Y.-I. Kim, P.M. Woodward, K.Z. Baba-Kishi, and C.W. Tai Chem. Mater. 16 2004 1267
24. S.G. Ebbinghaus, R. Aguiar, A. Weidenkaff, S. Gsell, and A. Reller Solid State Sci. 10 2008 709
25. D. Balzar, P.A. Ramakrishnan, and A.M. Hermann Phys. Rev. B 70 2004 092103
26. C.S. Hwang J. Appl. Phys. 92 2002 432