Study of organic grafting of the silicon surface from 4-nitrobenzene diazonium tetrafluoroborate

Electrochimica Acta

Volumn 70, Issue , 2012, Pages 318-324

  El Hadj, F Ait ^a   Amiar, A ^a   Cherkaoui, M ^a   Chazalviel, J N ^b   Ozanam, F ^b  

^a IBN TOFAIL UNIVERSITY   (Morocco)

^b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

4 Nitrobenzene diazonium tetrafluoroborate; Electrochemical reduction; Grafting; Hydrogenated silicon surface; Voltammetry

Indexed keywords

AQUEOUS MEDIUM; CHEMICAL FUNCTIONS; ELECTROCHEMICAL IMPEDANCE MEASUREMENTS; ELECTROCHEMICAL REACTIONS; ELECTROCHEMICAL REDUCTIONS; FTIR; HYDROGENATED SILICON; IN-SITU; INTERFACIAL MECHANISM; OPEN CIRCUIT POTENTIAL; ORGANIC MOLECULES; POLYMERIC LAYERS; REDUCTION POTENTIAL; SI-H BONDS; SILICON SURFACES; TETRAFLUOROBORATES; VOLTAMMETRIC PEAK;

BOND STRENGTH (CHEMICAL); CHEMICAL DETECTION; ELECTROLYTIC REDUCTION; ELECTRONIC PROPERTIES; HYDROGENATION; INFRARED SPECTROSCOPY; NITROBENZENE; VOLTAMMETRY;

GRAFTING (CHEMICAL);

EID: 84860282037     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2012.03.072     Document Type: Article

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