The radial layout design concept for the Bi-mode insulated gate transistor

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 56-59

  Storasta, L ^a   Rahimo, M ^a   Bellini, M ^a   Kopta, A ^a   Vemulapati, U R ^b   Kaminski, N ^b  

^a ABB SWITZERLAND LTD   (Switzerland)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

3D DEVICE SIMULATION; 3D SIMULATIONS; BI MODES; DESIGN CONCEPT; GATE TRANSISTORS; INSULATED GATE; LAYOUT DESIGNS; PLASMA DISTRIBUTION;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); THREE DIMENSIONAL;

THREE DIMENSIONAL COMPUTER GRAPHICS;

EID: 84860149606     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890789     Document Type: Conference Paper

References (4)

1. M. Rahimo, A. Kopta, U. Schlapbach, J. Vobecky, R. Schnell, S. Klaka, The Bi-mode Insulated Gate Transistor (BiGT) A potential technology for higher power applications, Proc. ISPSD09, p 283, 2009.
2. L. Storasta, A. Kopta, M. Rahimo, A comparison of charge dynamics in the Reverse-Conducting RC IGBT and Bi-mode Insulated Gate Transistor BiGT, Proc. ISPSD10, p.283, 2010.
3. A. Bourennane, J-L. Sanchez, F. Richardeau, E. Imbernon, M. Breil, On the integration of a PIN diode and an IGBT for a specific application Proc. ISPS06, Czech Rep., p 145, 2006.
4. M. Gartner, D. Vietzke, D. Reznik, M. Stoisiek, K.-G. Oppermann, W. Gerlach, Bistability and hysteresis in the characteristics of segmented anode lateral IGBTs, IEEE Trans. Electron. Dev., vol. 45, pp. 1575-1579, July 1998.