Ultrathin 400V FS IGBT for HEV applications

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 64-67

  Boving, Heike ^a   Laska, Thomas ^a   Pugatschow, Anton ^b   Jakobi, Waldemar ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP THICKNESS; DC-LINK VOLTAGES; FAST SWITCHING; FREEWHEELING DIODES; HEV APPLICATIONS; STRAY INDUCTANCES; SWITCHING BEHAVIORS; SWITCHING LOSS;

ENERGY DISSIPATION; HYBRID VEHICLES; INDUCTANCE; SWITCHING; VOLTAGE REGULATORS;

DIODES;

EID: 84880748893     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890791     Document Type: Conference Paper

References (7)

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2. H.Rüthing et al., "The 600V-IGBT3: Trench Field Stop Technology in 70m Ultra Thin Wafer Technology", Proceedings of the 15th ISPSD, 2003
3. A.Mauder.et al., "The Field Stop IGBT Concept and Emcon High Efficiency Diode", Proceedings PCIM USA, 2000.
4. Münzer, M.; Thoben, M. & Gietzold, T. (2006), 'HEV Power Electronics-Adapting to automotive requirements', The 22nd International Battery, Hybrid and Fuel Cell Electric Vehicle Symposium & Exposition, 2312-2319
5. D. Burns et al.: "NPT-IGBT-Optimizing for Manufacturability", Proceedings of the 8th ISPSD, 1996
6. T. Laska et al.: "Ultrathin-Wafer Technology for a new 600V-NPTIGBT", Proceedings of the 9th ISPSD, pp.361-364, 1997
7. T. Matsudai et al.: "New 600V Trench Gate Punch-Through IGBT Concept with Very Thin Wafer and Low Efficiency p-emitter, having an On-state Voltage Drop lower than Diodes", Proceedings of the IPEC Tokyo, pp.292-296, 2000