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Solid State Communications

Volumn 152, Issue 9, 2012, Pages 816-820

First-principles study of intrinsic defect properties in hexagonal BN bilayer and monolayer

(4) Wang, Vei a,b Ma, Ning b Mizuseki, Hiroshi a Kawazoe, Yoshiyuki a

a TOHOKU UNIVERSITY (Japan)

b XI'AN JIAOTONG UNIVERSITY (China)

Author keywords

First principles calculation; Hexagonal boron nitride layer; Intrinsic defect

Indexed keywords

BORON NITRIDE; CALCULATIONS; DENSITY FUNCTIONAL THEORY; MONOLAYERS;

BI-LAYER; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; HEXAGONAL BORON NITRIDE LAYERS; INTRINSIC DEFECTS; N-TYPE CONDUCTIVITY; TRANSITION ENERGY LEVELS;

DEFECTS;

EID: 84859806126 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2012.01.034 Document Type: Article

Times cited : (40)

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