In 0.75Ga 0.25As/InP multiple quantum-well discrete-mode laser diode emitting at 2 μm

IEEE Photonics Technology Letters

Volumn 24, Issue 8, 2012, Pages 652-654

  Phelan, Richard ^a   O'Carroll, John ^a   Byrne, Diarmuid ^a   Herbert, Chris ^a   Somers, Jim ^a   Kelly, Brian ^a  

^a Unit 32 Trinity Technology and Enterprise Campus   (Ireland)

Author keywords

Mid infrared sources; semiconductor laser; single mode laser; strained quantum well

Indexed keywords

INGAAS/INP; MIDINFRARED; OUTPUT POWER; SINGLE MODE; SINGLE-MODE LASERS; TEMPERATURE RANGE;

LIGHT SOURCES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

LASER MODES;

EID: 84859751485     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2185689     Document Type: Article

References (12)

1. Available: http://www.modegap.eu/
2. P. J. Roberts, et al., "Ultimate low loss of hollow-core photonic crystal fibres, " Opt. Express, vol. 13, no. 1, pp. 236-244. Jan. 2005. (Pubitemid 40224973)
3. C. Lauer, et al, "80 °C continuous-wave operation of 2.01-//m wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers, " IEEE Photon. Technol. Lett., vol. 16, no. 10, pp. 2209-2211, Oct. 2004.
4. J. S. Major, Jr., D. W. Nam, J. S. Osinski, and D. F. Welch, "High-power 2.0 //m InGaAsP laser diodes, " IEEE Photon. Technol. Lett, vol. 5, no. 6, pp. 594-596, Jun. 1993. (Pubitemid 23695334)
5. D. Serries, M. Peter, R. Kiefer, K. Winkler, and J. Wagner, "Improved performance of 2-mm GaInAs strained quantum-well lasers on InP by increasing carrier confinement, " IEEE Photon. Technol. Lett., vol. 13, no. 5, pp. 412-414, May 2001. (Pubitemid 32508586)
6. T. Sato, M. Mitsuhara, and Y. Kondo "2.33 um-wavelength InAs/InGaAs multiple-quantum-well lasers grown by MOVPE, " Electron. Lett., vol. 43, no. 21, pp. 1143-1144, Oct. 2007.
7. 0 23As/InGaAs multiple quantum well lasers emitting at 2.07 /um wavelength, " Appl. Phys. Lett., vol. 72, no. 24, pp. 3106-3108, Jun. 1998. (Pubitemid 128677259)
8. S. Forouhar, S. Keo, A. Larsson, A. Ksendzov, and H. Temkin, "Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at approximately 2.0 wm, " Electron. Lett., vol. 29, no. 7, pp. 574-576, Apr. 1993.
9. T. Bleuel, "2-um GaInSb-AlGaAsSb distributed-feedback lasers, " IEEE Photon. Technol. Lett., vol. 13, no. 6, pp. 553-555, Jun. 2001.
10. M. Rattunde, et al, "Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 um diode lasers, " Appl. Phys. Lett., vol. 80, no. 22, pp. 4085-4087, Jun. 2002.
11. R. Phelan, B. Kelly, J. O'Carroll, C. Herbert, A. Duke, and J. O'Gorman, "-40 °C < T < 95 °C mode-hop-free operation of uncooled AlGaInAs-MQW discrete-mode laser diode with emission at A = 1.3 //m, " IEE Electron. Lett., vol. 45, no. 1, pp. 43-45, Jan. 2009.
12. J. Patchell, D. Jones, B. Kelly, and J. O'Gorman, "Specifying the wavelength and temperature tuning range of a Fabry-Pérot laser containing refractive index perturbations, " Proc. SPIE, vol. 5825, pp. 1-13, Apr. 2005. (Pubitemid 41570645)