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Volumn 43, Issue 21, 2007, Pages 1143-1145

2.33m-wavelength InAs/InGaAs multiple-quantum-well lasers grown by MOVPE

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; INDIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS; VAPOR PHASE EPITAXY; WAVELENGTH;

EID: 35148891220     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072257     Document Type: Article
Times cited : (25)

References (7)
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    • 2.05-m wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power
    • 10.1109/68.736381 1041-1135
    • Mitsuhara, M., Ogasawara, M., Oishi, M., Sugiura, H., and Kasaya, K.: ' 2.05-m wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power ', IEEE Photonics Technol. Lett., 1999, 11, (1), p. 33-35 10.1109/68.736381 1041-1135
    • (1999) IEEE Photonics Technol. Lett. , vol.11 , Issue.1 , pp. 33-35
    • Mitsuhara, M.1    Ogasawara, M.2    Oishi, M.3    Sugiura, H.4    Kasaya, K.5
  • 2
    • 27844602165 scopus 로고    scopus 로고
    • Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1m by metalorganic vapor phase epitaxy
    • 10.1063/1.2133920 0003-6951
    • Sato, T., Mitsuhara, M., Watanabe, T., and Kondo, Y.: ' Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1m by metalorganic vapor phase epitaxy ', Appl. Phys. Lett., 2005, 87, (21), p. 211903 10.1063/1.2133920 0003-6951
    • (2005) Appl. Phys. Lett. , vol.87 , Issue.21 , pp. 211903
    • Sato, T.1    Mitsuhara, M.2    Watanabe, T.3    Kondo, Y.4
  • 3
    • 0032187582 scopus 로고    scopus 로고
    • Room-temperature 2.2-m InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy
    • 10.1109/3.720233 0018-9197
    • Wang, J.S., Lin, H.H., and Sung, L.W.: ' Room-temperature 2.2-m InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy ', IEEE J. Quantum Electron., 1998, 34, (10), p. 1959-1962 10.1109/3.720233 0018-9197
    • (1998) IEEE J. Quantum Electron. , vol.34 , Issue.10 , pp. 1959-1962
    • Wang, J.S.1    Lin, H.H.2    Sung, L.W.3
  • 4
    • 33947324345 scopus 로고    scopus 로고
    • Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3m
    • et al. 10.1016/j.jcrysgro.2006.11.098 0022-0248
    • Boehm, G.: et al. ' Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3m ', J. Cryst. Growth, 2007, 301-302, p. 941-944 10.1016/j.jcrysgro.2006.11.098 0022-0248
    • (2007) J. Cryst. Growth , vol.301-302 , pp. 941-944
    • Boehm, G.1
  • 5
    • 0000321982 scopus 로고
    • Strained InAs/InP quantum well heterostructure lasers grown by low-pressure metalorganic chemical vapor deposition
    • et al. 10.1063/1.112297 0003-6951
    • Xing, Q.J.: et al. ' Strained InAs/InP quantum well heterostructure lasers grown by low-pressure metalorganic chemical vapor deposition ', Appl. Phys. Lett., 1994, 65, (5), p. 567-569 10.1063/1.112297 0003-6951
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.5 , pp. 567-569
    • Xing, Q.J.1
  • 6
    • 0030216017 scopus 로고    scopus 로고
    • Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-m InP-based strained-layer quantum-well lasers
    • 10.1109/3.511561 0018-9197
    • Seki, S., Oohashi, H., Sugiura, H., Hirono, T., and Yokoyama, K.: ' Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-m InP-based strained-layer quantum-well lasers ', IEEE J. Quantum Electron., 1996, 32, (8), p. 1478-1486 10.1109/3.511561 0018-9197
    • (1996) IEEE J. Quantum Electron. , vol.32 , Issue.8 , pp. 1478-1486
    • Seki, S.1    Oohashi, H.2    Sugiura, H.3    Hirono, T.4    Yokoyama, K.5
  • 7
    • 0001129545 scopus 로고
    • Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy
    • 10.1063/1.345050 0021-8979
    • Fang, Z.M., Ma, K.Y., Jaw, D.H., Cohen, R.M., and Stringfellow, G.B.: ' Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy ', J. Appl. Phys., 1990, 67, (11), p. 7034-7039 10.1063/1.345050 0021-8979
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.